? semiconductor components industries, llc, 2004 july, 2004 ? rev. 2 1 publication order number: 2n5088/d 2n5088, 2n5089 amplifier transistors npn silicon features ? pb?free packages are available* maximum ratings rating symbol value unit collector ? emitter voltage 2n5088 2n5089 v ceo 30 25 vdc collector ? base voltage 2n5088 2n5089 v cbo 35 30 vdc emitter ? base voltage v ebo 3.0 vdc collector current ? continuous i c 50 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 w mw/ c operating and storage junction temperature range t j , t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit thermal resistance, (note 1) junction?to?ambient r ja 200 c/w thermal resistance, junction?to?case r jc 83.3 c/w 1. r ja is measured with the device soldered into a typical printed circuit board. *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 3 2 1 http://onsemi.com to?92 case 29 style 1 x 8 or 9 y = year ww = work week marking diagram 2n 508x yww collector 3 2 base 1 emitter device package shipping 2 2n5088 to?92 5000 units/box 2N5088RLRA to?92 2000/tape & reel 2n5089g 2n2089rlrag 2n2089rlre to?92 (pb?free) 2n5089 to?92 ordering information 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. 2n2089rlreg to?92 2n2089rlra to?92 5000 units/box 5000 units/box 2000/tape & reel 2000/tape & reel 2000/tape & reel to?92 (pb?free) to?92 (pb?free) 5000 units/box
2n5088, 2n5089 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ?emitter breakdown voltage (note 2) (i c = 1.0 madc, i b = 0) 2n5088 2n5089 v (br)ceo 30 25 ? ? vdc collector ?base breakdown voltage (i c = 100 adc, i e = 0) 2n5088 2n5089 v (br)cbo 35 30 ? ? vdc collector cutoff current (v cb = 20 vdc, i e = 0) 2n5088 (v cb = 15 vdc, i e = 0) 2n5089 i cbo ? ? 50 50 nadc emitter cutoff current (v eb(off) = 3.0 vdc, i c = 0) (v eb(off) = 4.5 vdc, i c = 0) i ebo ? ? 50 100 nadc on characteristics dc current gain (i c = 100 adc, v ce = 5.0 vdc) 2n5088 2n5089 (i c = 1.0 madc, v ce = 5.0 vdc) 2n5088 2n5089 (i c = 10 madc, v ce = 5.0 vdc) (note 2) 2n5088 2n5089 h fe 300 400 350 450 300 400 900 1200 ? ? ? ? ? collector ?emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) v ce(sat) ? 0.5 vdc base ?emitter on voltage (i c = 10 madc, v ce = 5.0 vdc) (note 2) v be(on) ? 0.8 vdc small?signal characteristics current ?gain ? bandwidth product (i c = 500 adc, v ce = 5.0 vdc, f = 20 mhz) f t 50 ? mhz collector?base capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) c cb ? 4.0 pf emitter?base capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c eb ? 10 pf small?signal current gain (i c = 1.0 madc, v ce = 5.0 vdc, f = 1.0 khz) 2n5088 2n5089 h fe 350 450 1400 1800 ? noise figure (i c = 100 adc, v ce = 5.0 vdc, r s = 1.0 k , 2n5088 f = 1.0 khz) 2n5089 nf ? ? 3.0 2.0 db 2. pulse test: pulse width 300 s, duty cycle 2.0%. r s i n e n ideal transistor figure 1. transistor noise model
2n5088, 2n5089 http://onsemi.com 3 figure 2. effects of frequency f, frequency (hz) 7.0 10 20 30 5.0 figure 3. effects of collector current i c , collector current (ma) figure 4. noise current f, frequency (hz) figure 5. wideband noise figure r s , source resistance (ohms) 3.0 10 noise characteristics (v ce = 5.0 vdc, t a = 25 c) noise voltage e n , noise voltage (nv) e n , noise voltage (nv) i n , noise current (pa) nf, noise figure (db) 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k bandwidth = 1.0 hz bandwidth = 1.0 hz bandwidth = 1.0 hz i c = 10 ma 300 a 30 a r s 0 3.0 ma 1.0 ma 7.0 10 20 30 5.0 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 r s 0 f = 10 hz 100 hz 1.0 khz 10 khz 100 khz i c = 10 ma 3.0 ma 1.0 ma 300 a 100 a 10 a r s 0 10 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 0.1 0.2 0.3 1.0 0.7 2.0 3.0 5.0 7.0 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 0 4.0 8.0 12 16 20 bandwidth = 10 hz to 15.7 khz i c = 1.0 ma 500 a 100 a 10 a 100 hz noise data 300 200 100 3.0 5.0 7.0 10 20 30 50 70 r s , source resistance (ohms) 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k v t , total noise voltage (nv) nf, noise figure (db) 0 4.0 8.0 12 16 20 figure 6. total noise voltage bandwidth = 1.0 hz i c = 10 ma 3.0 ma 1.0 ma 300 a 100 a 30 a 10 a 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k i c = 10 ma 300 a 100 a 30 a 3.0 ma 1.0 ma 10 a bandwidth = 1.0 hz r s , source resistance (ohms) figure 7. noise figure 0.5
2n5088, 2n5089 http://onsemi.com 4 figure 8. dc current gain i c , collector current (ma) 0.4 1.0 2.0 3.0 4.0 0.3 0.01 h , dc current gain (normalized) 0.05 2.0 3.0 10 0.02 0.03 0.2 1.0 0.1 5.0 fe v ce = 5.0 v t a = 125 c 25 c -55 c 0.7 0.5 0.5 0.2 0.3 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 figure 9. aono voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 0.2 figure 10. temperature coefficients i c , collector current (ma) v, voltage (volts) 0.01 0 -0.8 -1.2 -1.6 -2.4 t j = 25 c v ce(sat) @ i c /i b = 10 v be @ v ce = 5.0 v t j = 25 c to 125 c -55 c to 25 c r vbe , base-emitter q temperature coefficient (mv/ c) -0.4 -2.0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f t , current-gain bandwidth product (mhz) c, capacitance (pf) 8.0 0.8 1.0 2.0 3.0 4.0 6.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 t j = 25 c c cb c ob c eb c ib 1.0 2.0 5.0 3.0 7.0 10 20 30 50 70 100 500 300 200 70 50 100 v ce = 5.0 v t j = 25 c figure 11. capacitance v r , reverse voltage (volts) figure 12. current?gain e bandwidth product i c , collector current (ma)
2n5088, 2n5089 http://onsemi.com 5 package dimensions to?92 to?226aa case 29?11 issue al notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x?x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 1: pin 1. emitter 2. base 3. collector
2n5088, 2n5089 http://onsemi.com 6 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 2n5088/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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